| PART |
Description |
Maker |
| IRG8P40N120KD-EPBF IRG8P40N120KDPBF |
1200V UltraFast Co-Pack IGBT in a TO-247 package
|
International Rectifier
|
| IRG8B08N120KD |
1200V UltraFast Co-Pack IGBT in a TO-220AB package
|
International Rectifier
|
| IRG7PH35UD-EP |
1200V UltraFast Discrete IGBT in a TO-247 package with UltraFast Soft Recovery Diode
|
International Rectifier
|
| IRG4PH50KD IRG4PH50KD-E |
45 A, 1200 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.77V @Vge=15V Ic=24A)
1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
| 1MBI300S-120 |
1-Pack IGBT 1200V 1x300A
|
Fujitsu Limited
Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu Component Limited.
|
| MBN400GR12 |
IGBT Module
Rated 400A/1200V, Single-pack type
|
HITACHI[Hitachi Semiconductor]
|
| IRG7PH42UD IRG7PH42UD-EP |
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247 package
|
International Rectifier
|
| IRG4PH40UD-EPBF |
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package
|
International Rectifier
|
| IRG4PSH71UPBF |
1200V UltraFast 8-40 kHz Discrete IGBT in a TO-274AA package
|
International Rectifier
|
| IRGB5B120KD |
1200V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package
|
International Rectifier
|
| IRG4PH50UD IRG4PH50 |
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.78V @Vge=15V Ic=24A)
|
IRF[International Rectifier]
|
| IRG4PH40KD |
1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.47V @Vge=15V Ic=15A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.47V, @Vge=15V, Ic=15A)
|
IRF[International Rectifier]
|
